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PMEG6030ELP Datasheet

Manufacturer: NXP Semiconductors
PMEG6030ELP datasheet preview

PMEG6030ELP Details

Part number PMEG6030ELP
Datasheet PMEG6030ELP-NXP.pdf
File Size 209.13 KB
Manufacturer NXP Semiconductors
Description 3A low leakage current Schottky barrier rectifier
PMEG6030ELP page 2 PMEG6030ELP page 3

PMEG6030ELP Overview

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

PMEG6030ELP Key Features

  • Extremely low leakage current IR = 340 nA
  • Average forward current: IF(AV) ≤ 3 A
  • Reverse voltage: VR ≤ 60 V
  • Low forward voltage VF = 600 mV
  • High power capability due to clip-bonding technology
  • High temperature Tj ≤ 175 °C
  • Small and flat lead SMD plastic package
  • AEC-Q101 qualified

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