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PMEM1505NG - NPN transistor/Schottky rectifer module

General Description

Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353 (SC-88A) small plastic package.

PNP complement: PMEM1505PG.

Key Features

  • s s s s s s 300 mW total power dissipation Current capability up to 0.5 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor x Low collector-emitter saturation voltage. s Diode x Ultra high-speed switching x Very low forward voltage x Guard ring protected. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PMEM1505NG NPN transistor/Schottky rectifier module Rev. 01 — 25 May 2004 Product data sheet 1. Product profile 1.1 General description Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353 (SC-88A) small plastic package. PNP complement: PMEM1505PG. 1.2 Features s s s s s s 300 mW total power dissipation Current capability up to 0.5 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor x Low collector-emitter saturation voltage. s Diode x Ultra high-speed switching x Very low forward voltage x Guard ring protected. 1.