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PMEM4010PD Datasheet PNP Transistor/schottky Diode Module

Manufacturer: NXP Semiconductors

PMEM4010PD Overview

5 4 4 3 6 APPLICATIONS DC/DC convertors Inductive load drivers General purpose load drivers Reverse polarity protection circuits. DESCRIPTION bination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. 5 1 1 2 3 MGU868 Fig.1 Simplified outline (SOT457) and symbol.

PMEM4010PD Key Features

  • 600 mW total power dissipation
  • High current capability
  • Reduces required PCB area
  • Reduced pick and place costs
  • Small plastic SMD package. Transistor
  • Low collector-emitter saturation voltage. Diode
  • Ultra high-speed switching
  • Very low forward voltage
  • Guard ring protected

PMEM4010PD Distributor