PMEM4020ND Overview
bination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020ND − DESCRIPTION plastic surface mounted package; VERSION SOT457 2003 Nov 10 2 Philips Semiconductors Product specification NPN transistor/Schottky-diode module...
PMEM4020ND Key Features
- 600 mW total power dissipation
- High current capability
- Reduces required PCB area
- Reduced pick and place costs
- Small plastic SMD package. Transistor
- Low collector-emitter saturation voltage. Diode
- Ultra high-speed switching
- Very low forward voltage
- Guard ring protected
PMEM4020ND Applications
- DC-to-DC converters