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PMEM4030PS - PNP transistor/Schottky rectifier module Combination

General Description

Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package.

NPN complement: PMEM4030NS.

Key Features

  • s s s s s s 1 W total power dissipation High current capability up to 2 A Reduces Printed-Circuit Board (PCB) area required Reduces pick and place costs Small plastic Surface Mounted Device (SMD) package Transistor x Low collector-emitter saturation voltage s Diode x High-speed switching x Low forward voltage x Guard ring protected 1.3.

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Other Datasheets by NXP Semiconductors

Part Number Description
PMEM4030NS NPN transistor/Schottky rectifer module
PMEM4010PD PNP transistor/Schottky diode module
PMEM4020AND NPN transistor/Schottky rectifer module
PMEM4020APD PNP transistor/Schottky rectifer module
PMEM4020ND NPN transistor/Schottky-diode module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMEM4030PS PNP transistor/Schottky rectifier module Rev. 01 — 28 June 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package. NPN complement: PMEM4030NS. 1.2 Features s s s s s s 1 W total power dissipation High current capability up to 2 A Reduces Printed-Circuit Board (PCB) area required Reduces pick and place costs Small plastic Surface Mounted Device (SMD) package Transistor x Low collector-emitter saturation voltage s Diode x High-speed switching x Low forward voltage x Guard ring protected 1.