PMF3800SN
PMF3800SN is N-channel TrenchMOS standard level FET manufactured by NXP Semiconductors.
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology.
1.2 Features s Logic level patible s Very fast switching s Subminiature surface-mounted package s Gate-source ESD protection diodes
1.3 Applications s Relay driver s High-speed line driver
1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 4.5 Ω s ID ≤ 260 m A s Ptot ≤ 0.56 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
Simplified outline
Symbol
SOT323 (SC-70)
03ab60
Philips Semiconductors
N-channel Trench MOS standard level FET
3. Ordering information
Table 2: Ordering information Package Name PMF3800SN SC-70 Description plastic surface mounted package; 3 leads Version SOT323 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source (diode forward) current Tsp = 25 °C Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min
- 55
- 55 Max 60 60 ±15 260 165 560 0.56 +150 +150 280 560 1 Unit V V V m A m A m A W °C °C m A m A k V
Source-drain diode peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs electrostatic discharge voltage Human body model 1; C = 100 p F; R = 1.5 kΩ
Electrostatic discharge voltage
9397 750 15218
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02
- 1 July 2005
2 of 12
Philips Semiconductors
N-channel Trench MOS standard level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
0 0 50 100 150 Tsp (°C)...
