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PMF3800SN - N-channel TrenchMOS standard level FET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • s Logic level compatible s Very fast switching s Subminiature surface-mounted package s Gate-source ESD protection diodes 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level compatible s Very fast switching s Subminiature surface-mounted package s Gate-source ESD protection diodes 1.3 Applications s Relay driver s High-speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 4.5 Ω s ID ≤ 260 mA s Ptot ≤ 0.56 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) G Simplified outline 3 Symbol D 1 2 SOT323 (SC-70) S 03ab60 Philips Semiconductors PMF3800SN N-channel TrenchMOS standard level FET 3.