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PMMT491A - NPN BISS transistor

Description

NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package.

PNP complement: PMMT591A.

1.

= p : Made in Hong Kong.

= t : Made in Malaysia.

= W : Made in China.

Features

  • High current (max. 1 A).
  • Low collector-emitter saturation voltage ensures reduced power consumption.

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Other Datasheets by NXP Semiconductors

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PMMT491A NPN BISS transistor Product data sheet Supersedes data of 2001 Jun 11 2004 Jan 13 NXP Semiconductors NPN BISS transistor Product data sheet PMMT491A FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and low power consumption are important. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. MARKING TYPE NUMBER PMMT491A MARKING CODE(1) 9A* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.
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