NXP Semiconductors PMR290UNE
700mA N-channel Trench MOSFET
| Part No. | PMR290UNE |
|---|---|
| Datasheet | PMR290UNE Download |
| Manufacturer |  NXP Semiconductors |
| Description | 700mA N-channel Trench MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Very fast switching● Trench MOSFET technology
● ESD protection up to 2 kV
● AEC-Q101 qualified 1.3
APPLICATIONS
● Relay driver● High-speed line driver
● Low-side loadswitch
● Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 290 Max 20 8 700 380 Unit V V mA mΩ Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors PMR290UNE 20 V, 700 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol
DESCRIPTION
G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SOT416 (SC-75) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name PMR290UNE SC-75DESCRIPTION
plastic surface-mounted package; 3 leads Version SOT416 Type number 4.
