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PMR290XN - N-channel FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PMR290XN N-channel µTrenchMOS™ extremely low level FET M3D173 Rev. 01 — 3 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 0.53 W s ID ≤ 0.97 A s RDSon ≤ 350 mΩ. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT416 (SC-75), simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBK090 MBB076 Simplified outline 3 Symbol d s SOT416 (SC-75) 3.