PMV130ENEA Datasheet PDF - NXP N-channel Trench MOSFET Specs

PMV130ENEA - N-channel Trench MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Logic-level compatible.
Very fast switching.
Trench MOSFET technology.
1 kV ESD protected.
AEC-Q101 qualified 3.

Datasheet Details

Part number	PMV130ENEA
Manufacturer	NXP
File Size	246.14 KB
Description	N-channel Trench MOSFET
Datasheet	PMV130ENEA Datasheet
Additional preview pages of the PMV130ENEA datasheet.

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Full PDF Text Transcription

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SOT23 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • 1 kV ESD protected • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 1.

Published: Jan 28, 2016 |