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PMV185XN
3 August 2012
30 V, single N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • Low RDSon • Very fast switching • Trench MOSFET technology 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.1 A; Tj = 25 °C
[1]
Conditions Tamb = 25 °C
Min -12 -
Typ -
Max 30 12 1.
PMV185XN Datasheet
