NXP Semiconductors PSMN012-25YLC
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.FEATURES AND BENEFITS
● High reliability Power SO8 package, qualified to 175°C● Low parasitic inductance and resistance
● Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
● Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3
APPLICATIONS
● DC-to-DC converters● Load switching
● Synchronous buck regulator 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 Min Typ Max Unit - - 25 V - - 33 A - - 26 W -55 - 175 °C - 14.1 16.6 mΩ - 10.7 12.6 mΩ - 1.22 - nC - 3.8 - nC NXP Semiconductors PSMN012-25YLC N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology 2.