PSMN038-100YL
Description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Key Features
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive
- LFPAK56 package is footprint compatible with other Power-SO8 types
- Qualified to 175 °C
