PSMN070-200B
description
Silicon MAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Higher operating power due to low thermal resistance
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
- DC-to-DC converters
- Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C
Min Typ Max Unit
- - 200 V
- - 35 A
- - 250 W
VGS = 10 V; ID = 17 A; Tj = 25 °C
- 60 70 mΩ
VGS = 10 V; ID = 35 A;
- 28
- n C
VDS = 160 V;...
