NXP Semiconductors PSMN1R0-30YLC
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN1R0-30YLC |
|---|---|
| Datasheet | PSMN1R0-30YLC Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High reliability Power SO8 package, qualified to 175°C● Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
● Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
● Ultra low Rdson and low parasitic inductance 1.3
APPLICATIONS
● DC-to-DC converters● Lithium-ion battery protection
● Load switching
● Power OR-ing
● Server power supplies
● Sync rectifier 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 1.1 Max Unit 30 100 272 175 1.4 V A W °C mΩ Static characteristics 0.85 1.15 mΩ Datasheet pdf - NXP Semiconductors PSMN1R0-30YLC N-channel 30 V 1.15 mΩ l...
