PSMN1R1-40BS Datasheet | NXP Semiconductors

D2 PA K N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK Rev. 2 - 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive sources 1.3 Applications - DC-to-DC convertors - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12;see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 75 A; VDS = 20 V; see Figure 14;see Figure 15 32 136 1.4 n C n C J Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 1.68 1.16 Max 40 120 306 175 2 1.3 Unit V A W °C mΩ mΩ Static characteristics Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω; tp = 0.1 ms [1] Continuous current is limited by package NXP Semiconductors N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK 2. Pinning...