PSMN1R4-30YLD Overview
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching...
PSMN1R4-30YLD Key Features
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery; s-factor > 1
- Low spiking and ringing for low EMI designs
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
- Optimised for 4.5 V gate drive
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach Power SO8 package; no glue, no
- Wave solderable; exposed leads for optimal visual solder inspection
PSMN1R4-30YLD Applications
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery; s-factor > 1
- Low spiking and ringing for low EMI designs
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
- Optimised for 4.5 V gate drive
