PSMN1R5-30BLE
Overview
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
- Enhanced forward biased safe operating area for superior linear mode operation
- Very low Rdson for low conduction losses 1.3 Applications
- Electronic fuse
- Hot swap
- Load switch
- Soft start 1.4 Quick reference data Table
- Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 VGS = 10 V; ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 228 nC 33.2 nC 1.7 1.85 mΩ [1] Min - Typ - Max 30 120 401 Unit V A W Static characteristics drain-source on-state resistance 1.3 1.5 mΩ Scan or click this QR code to view the latest information for this product Datasheet pdf - NXP Semiconductors
