PSMN1R6-40YLC
PSMN1R6-40YLC is MOSFET manufactured by NXP Semiconductors.
22 August 2012
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using Next Power technology
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
1.2 Features and benefits
- High reliability Power SO8 package, qualified to 150°C
- Optimised for 4.5V Gate drive utilising Next Power Superjunction technology
- Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
- Ultra low Rdson and low parasitic inductance 1.3 Applications
- DC-to-DC converters
- Load switching
- Power OR-ing
- Server power supplies
- Sync rectifier 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions 25 °C ≤ Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2
[1]
Min -55
Typ
- Max 40 100 288 150
Unit V A W °C
Static characteristics drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 20 V; Fig. 14 15.3 n C 1.25 1.55 mΩ 1.45 1.8 mΩ
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NXP Semiconductors
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using Next Power technology
Symbol QG(tot)
Parameter total gate charge
Conditions VGS = 4.5 V; ID = 25 A; VDS = 20 V; Fig....
