PSMN1R8-40YLC
Overview
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
- High reliability Power SO8 package, qualified to 175°C
- Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
- Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
- Ultra low Rdson and low parasitic inductance 1.3 Applications
- DC-to-DC converters
- Load switching
- Power OR-ing
- Server power supplies
- Sync rectifier 1.4 Quick reference data Table
- Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 [1] Min -55 Typ - Max 40 100 272 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 20 V; Fig. 15; Fig. 14 10.9 nC 1.5 1.8 mΩ 1.8 2.1 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors
