NXP Semiconductors PSMN2R7-30BL
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN2R7-30BL |
|---|---|
| Datasheet | PSMN2R7-30BL Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High efficiency due to low switching and conduction losses● Suitable for logic level gate drive sources 1.3
APPLICATIONS
● DC-to-DC converters● Load switiching
● Motor control
● Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped 8 32 nC nC Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 3.6 2.57 Max 30 100 170 175 4.2 3 Unit V A W °C mΩ mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 300 mJ [1] Continuous current is limited by package.
