NXP Semiconductors PSMN4R2-60PL
MOSFET
| Part No. | PSMN4R2-60PL |
|---|---|
| Datasheet | PSMN4R2-60PL Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
●●
● High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3.
APPLICATIONS
●●
●
● Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 151 27 nC nC [1] Min - Typ - Max 60 130 263 Unit V A W Static characteristics drain-source on-state resistance 3.17 3.9 mΩ Dynamic characteristics QG(tot) QGD EDS(AL)S total gate charge gate-drain charge Avalanche ruggedness non-repetitive drainsource avalanche energy [1] ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 - - 283 mJ Continuous current is limited by package. Scan...
