NXP Semiconductors PSMN4R4-30MLC
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN4R4-30MLC |
|---|---|
| Datasheet | PSMN4R4-30MLC Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low parasitic inductance and resistance● Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
● Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3
APPLICATIONS
● DC-to-DC converters● Load switching
● Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 10 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 10 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 12; see Figure 13 VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 12; see Figure 13 2.9 10.6 nC nC Conditions Tj = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 5.2 4.05 Max 30 70 69 175 6 4.65 Unit V A W °C mΩ mΩ Static characteristics [1] Continuous current is limited by package.
