PSMN4R8-100PSE
description
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "Next Power Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telemunication systems based on 48 V backplanes / supply rails.
2. Features and benefits
- Enhanced safe operating area (SOA) for superior protection during linear mode operation
- Very low RDS(on) for low conduction losses
3. Applications
- Electronic fuse
- Hot-swap / Soft-start
- Uninterruptible power supplies
- Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
IDM peak drain current pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon drain-source on-state...
