NXP Semiconductors PSMN5R0-100PS
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN5R0-100PS |
|---|---|
| Datasheet | PSMN5R0-100PS Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High efficiency due to low switching and conduction losses● Suitable for standard level gate drive sources 1.3
APPLICATIONS
● DC-to-DC converters● Load switching
● Motor control
● Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 50 V; see Figure 14; see Figure 15 49 170 nC nC [2] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 7.7 Max Unit 100 120 338 175 9 V A W °C mΩ Static characteristics - 4.3 5 mΩ Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source avalanche ID = 12...
