NXP Semiconductors PSMN5R6-100PS
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN5R6-100PS |
|---|---|
| Datasheet | PSMN5R6-100PS Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High efficiency due to low switching and conduction losses● Improved dynamic avalanche performance
● Suitable for standard level gate drive sources 1.3
APPLICATIONS
● DC-to-DC converters● Load switching
● Motor control
● Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12 VGS = 10 V; ID = 80 A; VDS = 50 V; Fig. 13; Fig. 14 43 141 nC nC [1] Min - Typ - Max 100 100 306 Unit V A W Static characteristics drain-source on-state resistance 4.3 5.6 mΩ Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge Avalanche Ruggedness non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped 469 mJ Scan or click this QR code to view th...
