NXP Semiconductors PSMN5R6-100XS
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN5R6-100XS |
|---|---|
| Datasheet | PSMN5R6-100XS Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High efficiency due to low switching and conduction losses● Isolated package
● Suitable for standard level gate drive 1.3
APPLICATIONS
● AC-to-DC power supply equipment● Motor control
● Server power supplies
● Synchronous rectification 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 15 A; VDS = 50 V; see Figure 14; see Figure 15 Min Typ 4.3 Max 100 61.8 60 5.6 Unit V A W mΩ Static characteristics Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy 41.2 145 550 nC nC mJ Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 61.8 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω; see Figure 3 NXP Semiconductors PSMN5R6-100XS N-channel 100V 5.6 mΩ standard level MOSFET in TO220F (SOT186A) 2.
