PSMN7R6-60PS Datasheet | NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET Rev. 03 - 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 9 VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 15; see Figure 14 VGS = 10 V; Tj(init) = 25 °C; ID = 92 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped Min Typ 5.9 Max Unit 60 92 149 7.8 V A W mΩ Static characteristics Dynamic characteristics QGD gate-drain charge 10.6 n C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 110 m J F r e e D a t a s h e e t NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78...