PTC4001T Overview
NPN silicon planar epitaxial microwave transistor in a SOT440A metal ceramic flange package with collector connected to flange. b 3 MAM131 PTC4001T QUICK REFERENCE DATA Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz. MODE OF OPERATION class A (CW) Note.
PTC4001T Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good characteristics stability and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance