NXP Semiconductors PUMT1
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 100 mA)● Low voltage (max. 40 V)
● Reduces number of components and boardspace.
APPLICATIONS
● General purpose switching and amplification. handbook, halfpage PUMT1 PINNING PIN 1, 4 2, 5 3, 6 emitter base collectorDESCRIPTION
TR1; TR2 TR1; TR2 TR2; TR1 6 5 4 5 4 6DESCRIPTION
Two independently operating PNP transistors in an SC-88; SOT363 plastic package. NPN complement: PUMX1. 1 2 3 1 MAM339 TR2 TR1 MARKING TYPE NUMBER PUMT1 MARKING CODE FtF Top view 2 3 Fig.1 Simplified outline (SC-88; SOT363) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junct...