PVB42004X Overview
Key Specifications
Max Operating Temp: 200 °C
Description
NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange. Top view Fig.1 Simplified outline and symbol.
Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low handbook, halfpage PVB42004X PINNING
- SOT445A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
