PVB42004X Overview
1 APPLICATIONS Intended for use in mon base class-B power amplifiers up to 4.2 GHz. 3 2 3 c b e MAM251 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the mon base connected to the flange. Top view Fig.1 Simplified outline and symbol.
PVB42004X Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- SOT445A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
PVB42004X Applications
- Intended for use in mon base class-B power amplifiers up to 4.2 GHz