PXB16050U Datasheet PDF - NXP NPN microwave power transistor Specs

PXB16050U - NPN microwave power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband ampliﬁer.

Features

Input and output matching cells allow an easier design of circuits.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.

Datasheet Details

Part number	PXB16050U
Manufacturer	NXP
File Size	74.18 KB
Description	NPN microwave power transistor
Datasheet	PXB16050U Datasheet
Additional preview pages of the PXB16050U datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PXB16050U NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product speciﬁcation NPN microwave power transistor FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz.

Published: Apr 16, 2005 |