Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
PZB16035U NPN microwave power transistor
Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Input matching cell improves input impedance and allows an easier design of wideband circuits....