PZB16035U Overview
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Top view 3 handbook, halfpage PZB16035U PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b e 2 MAM314 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a mon base class-B selective amplifier.
PZB16035U Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Input matching cell improves input impedance and allows an easier design of wideband circuits