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RX1214B300Y - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry improves power sharing and reduces thermal resistance.
  • Internal input and output matching networks for an easy circuit design.

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Datasheet preview – RX1214B300Y

Datasheet Details

Part number RX1214B300Y
Manufacturer NXP
File Size 74.90 KB
Description NPN microwave power transistor
Datasheet download datasheet RX1214B300Y Datasheet
Additional preview pages of the RX1214B300Y datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output matching networks for an easy circuit design. APPLICATIONS • Common base class-C wideband amplifiers operating under pulsed conditions, recommended for L-band radar applications.
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