RX1214B300Y Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange. QUICK REFERENCE DATA Microwave performance at Tmb ≤ 25 °C in a mon base class-C wideband amplifier. MODE OF OPERATION Class-C tp = 150 µs;.
RX1214B300Y Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry improves power sharing and reduces thermal resistance
- Internal input and output matching networks for an easy circuit design