RZ1214B35Y Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor Features - Interdigitated structure provides high emitter efficiency - Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR - Gold metallization realizes very stable characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance - Internal input matching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS - mon base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band. 2 3 handbook, halfpage PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Top view MAM314 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class-C wideband amplifier. MODE OF OPERATION Class-C; tp = 150 µs; δ = 5% f (GHz) 1.2 to 1.4 VCC (V) 50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL (W) ≥35 Gp (d B) ≥7 ηC (%) ≥30 Zi; ZL (Ω) see Fig 4 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the...