RZ1214B35Y Datasheet NPN microwave power transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product speciﬁcation NPN microwave power.

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Datasheet Details

Part number	RZ1214B35Y
Manufacturer	NXP Semiconductors
File Size	69.53 KB
Description	NPN microwave power transistor
Download	RZ1214B35Y Download (PDF)

General Description

1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

Top view MAM314 Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-C wideband ampliﬁer.

Key Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input matching ensures good stability and allows an easier design of wideband circuits.

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