S1M Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Ideal for surface mount automotive applications - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - UL 94V-O classified plastic package - Shipped in 12 mm embossed tape - Marking: cathode, date code, type code - Easy pick and place. Top view olumns S1 series DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. cathode band k a Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM S1A S1B S1D S1G S1J S1K S1M VR continuous reverse voltage S1A S1B S1D S1G S1J S1K S1M - - - - - - - 50 100 200 400 600 800 1000 V V V V V V V PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 200 400 600 800 1000 V V V V V V V CONDITIONS MIN. MAX. UNIT 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series SYMBOL VRMS S1A S1B S1D S1G S1J S1K S1M IF(AV) IFSM PARAMETER root mean square voltage CONDITIONS - - - - - - - averaged over any 20 ms period; Ttp = 110 °C; see Fig.2 t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR =...