SI4800 Overview
Description
Simplified outline source (s) gate (g) 85 drain (d) 1 Top view 4 MBK187 SOT96-1 (SO8) Symbol d g MBB076 s Philips Semiconductors SI4800 N-channel TrenchMOS™ logic level FET.
Key Features
- s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching
- 1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook computers s DC-to-DC converters
- 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 9 A s RDSon ≤ 18.5 mΩ
