SI4800 - N-channel FET

NXP Semiconductors

General Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching. 1.3.

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SI4800 n-channel fet by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	SI4800
Manufacturer	NXP Semiconductors
File Size	88.47 KB
Description	N-channel FET
Datasheet	SI4800 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SI4800 N-channel TrenchMOS™ logic level FET M3D315 Rev. 02 — 17 February 2004 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching. 1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook computers s DC-to-DC converters. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 9 A s RDSon ≤ 18.5 mΩ 2.