Datasheet Summary
N-channel TrenchMOS™ logic level FET
M3D315 Rev. 02
- 17 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching.
1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook puters s DC-to-DC converters.
1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 9 A s RDSon ≤ 18.5 mΩ
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8
Pinning
- SOT96-1 (SO-8), simplified outline and symbol
Description
Simplified outline source (s) gate (g)
85...
