NXP Semiconductors TEA1610P
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration.| Part No. | TEA1610P |
|---|---|
| Datasheet | TEA1610P Download |
| Manufacturer |  NXP Semiconductors |
| Description | Zero-voltage-switching resonant converter controller |
| Buy | Stock & Price |
FEATURES
I Integrated high voltage level-shift function I Integrated high voltage bootstrap diode I Low start-up current (green function) I Adjustable dead time I Transconductance error amplifier for ultra high-ohmic regulation feedback I Latched shut-down circuit for overcurrent and overvoltage protection I Adjustable minimum and maximum frequencies I Undervoltage lockout NXP Semiconductors TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller 3.APPLICATIONS
I TV and monitor power supplies I High voltage power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VHS IGH(source) high side driver voltage high side output source current IGL(source) low side output source current VDD(F) = 13 V; VSH = 0 V; VGH = 0 V VGL = 0 V IGH(sink) IGL(sink) fbridge(max) high side output sink current VDD(F) = 13 V; VSH = 0 V; VGH = 13 V low side output sink current VGL = 14 V maximum bridge frequency CF = 100 pF; IIFS = 1 mA; IIRS = 200 µA; fbridg...
