BUK7510-55AL Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK7510-55AL Key Features
- 175 °C rated
- Stable operation in linear mode
- Q101 pliant
- TrenchMOS technology