Download BUK7Y08-40B Datasheet PDF
BUK7Y08-40B page 2
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BUK7Y08-40B Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

BUK7Y08-40B Key Features

  • Q101 pliant
  • Suitable for standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating