Download PBHV9115T Datasheet PDF
PBHV9115T page 2
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PBHV9115T page 3
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PBHV9115T Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PBHV9115T Applications

  • = -: made in Hong Kong
  • = p: made in Hong Kong
  • = t: made in Malaysia
  • = W: made in China