1N1183 - Standard Recovery Diode

Naina Semiconductor

Key Features

Glass passivated die.
Low forward voltage drop.
High surge capability.
Low leakage current.
Normal and Reverse polarity.
Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-s.

1N1183 standard recovery diode by Naina Semiconductor - Datasheet Preview

Datasheet Details

Part number	1N1183
Manufacturer	Naina Semiconductor
File Size	542.93 KB
Description	Standard Recovery Diode
Datasheet	1N1183 Datasheet

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Other Datasheets by Naina Semiconductor

Part Number	Description
1N1183R	Standard Recovery Diode
1N1184	Standard Recovery Diode
1N1184R	Standard Recovery Diode
1N1185	Standard Recovery Diode
1N1185R	Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Naina Semiconductor Ltd. 1N1183 thru 1N1186R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 10 10 1N1184(R) 100 70 100 35 595 1.2 10 10 1N1185(R) 150 105 150 35 595 1.