1N1186R - Standard Recovery Diode

This page provides the datasheet information for the 1N1186R, a member of the 1N1183 Standard Recovery Diode family.

Product Overview

Naina Semiconductor

Part number	1N1186R
Manufacturer	Naina Semiconductor
File Size	542.93 KB
Description	Standard Recovery Diode
Datasheet	1N1186R Datasheet
Additional preview pages of the 1N1186R datasheet.

Glass passivated die.
Low forward voltage drop.
High surge capability.
Low leakage current.
Normal and Reverse polarity.
Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-s.

1N1186R - Silicon Standard Recovery Diode (America Semiconductor)
1N1186R - Silicon Standard Recovery Diode (GeneSiC)
1N1186 - Silicon-Power Rectifiers (Diotec Semiconductor)
1N1186 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N1186 - Silicon Standard Recovery Diode (America Semiconductor)
1N1186 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N1186 - Silicon Power Rectifier (Microsemi)
1N1186 - Silicon Standard Recovery Diode (GeneSiC)
1N1186A - Silicon Power Rectifier (Microsemi)
1N1186A - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)

Other Datasheets by Naina Semiconductor

Published: Jun 26, 2019 |