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1N1187 - Standard Recovery Diode

Key Features

  • Glass passivated die.
  • Low forward voltage drop.
  • High surge capability.
  • Low leakage current.
  • Normal and Reverse polarity.
  • Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, hal.

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Datasheet Details

Part number 1N1187
Manufacturer Naina Semiconductor
File Size 539.16 KB
Description Standard Recovery Diode
Datasheet download datasheet 1N1187 Datasheet

Full PDF Text Transcription for 1N1187 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1N1187. For precise diagrams, and layout, please refer to the original PDF.

Naina Semiconductor Ltd. 1N1187 thru 1N1190R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage...

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d die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 10 10 1N1188(R) 400 280 400 35 595 1.2 10 10 1N1189(R) 500 3