1N1190 - Standard Recovery Diode

This page provides the datasheet information for the 1N1190, a member of the 1N1187 Standard Recovery Diode family.

Product Overview

Naina Semiconductor

Part number	1N1190
Manufacturer	Naina Semiconductor
File Size	539.16 KB
Description	Standard Recovery Diode
Datasheet	1N1190 Datasheet
Additional preview pages of the 1N1190 datasheet.

Glass passivated die.
Low forward voltage drop.
High surge capability.
Low leakage current.
Normal and Reverse polarity.
Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, hal.

1N1190 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N1190 - Silicon-Power Rectifiers (Diotec Semiconductor)
1N1190 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N1190 - Silicon Standard Recovery Diode (GeneSiC)
1N1190 - Silicon Standard Recovery Diode (America Semiconductor)
1N1190 - Silicon Power Rectifier (Microsemi)
1N1190 - DIODE (DSI)
1N1190A - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N1190A - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N1190A - Silicon Power Rectifier (Microsemi)

Other Datasheets by Naina Semiconductor

Published: Jun 26, 2019 |