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1N5829 - (1N5829 - 1N5831R) Schottky Power Diode

Key Features

  • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5829 thru 1N5831R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC tp = 8.3 ms IF = 25 A.

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Datasheet Details

Part number 1N5829
Manufacturer Naina Semiconductor
File Size 171.86 KB
Description (1N5829 - 1N5831R) Schottky Power Diode
Datasheet download datasheet 1N5829 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Naina Semiconductor Ltd. Schottky Power Diode, 25A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5829 thru 1N5831R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC tp = 8.3 ms IF = 25 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o Test Conditions Symbol VRRM VRMS VDC IF IFSM http://www.DataSheet4U.net/ 1N5829(R) 20 14 20 25 800 0.58 2 250 1N5830(R) 25 17 25 25 800 0.58 2 250 1N5831(R) 35 25 35 25 800 0.