BY397 Datasheet | Naina Semiconductor

.Data Sheet.co.kr Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 3.0A Features - - - - - Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics - Case: Molded Plastic - - - - Cathode indicated by Polarity band Mounting position: Any Terminals: Finish Tin plated, , Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approx.) DO-201AD 201AD (DO-27) (DO Maximum Ratings (TA = 250C unless otherwise specified specified) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) ms) single half sine sine-wave superimposed on rated load Symbol VRRM VRMS VDC IF(AV) IFSM BA159 200 140 200 3.0 200 Units V V V A A Electrical Characteristics (TA = 250C unless otherwise specified) Parameters Maximum DC forward voltage drop @ 3.0A A DC Maximum DC reverse current @ rated DC blocking voltage Maximum reverse recovery time TA = 250C TA = 550C Symbol VF IR t RR BA159 1.3 10 50 500 Units V µA ns Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Typical thermal resistance, junction to ambient Operating and Storage temperature range Symbol RθJA TJ , TStg Values 65 - 65 6 to + 150 Units 0 C/W D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 4205450 - Fax: 0120-4273653 0120 sales@nainasemi. - .nainasemi. Datasheet pdf - http://..net/ .Data Sheet.co.kr Naina Semiconductor emiconductor Ltd. Dimensions in inches and (millimeters) D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 4205450 - Fax: 0120-4273653 0120 sales@nainasemi....