IN6391
IN6391 is Schottky Diodes manufactured by Naina Semiconductor.
.Data Sheet.co.kr
Naina Semiconductor emiconductor Ltd.
Schottky Barrier Rectifier Diode
Features
- Fast Switching
- Low forward voltage drop, VF
- Guard ring protection
- High surge capacity
- High efficiency, low power loss
1N6391
Electrical Ratings (TC = 250C, unless otherwise noted)
Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rectified forward current 0 (TC = 85 C) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz Symbol VRRM 45 VDC VRSM IF(AV) 54 25 V A
DO-203AA 203AA (DO-4) (DO
Values
Units V
IFSM
Maximum Ratings (TC = 250C, unless otherwise noted)
Parameter Maximum instantaneous forward voltage Test Conditions IF = 5 A IF = 50 A TC = 125 C Maximum instantaneous reverse current at rated DC voltage TC = 100 C
Symbol VF
Values 0.44 0.78 40
Units V V m A m A
IR 400
Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted)
Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg W Values 2.0 -65 to +125 -65 to +125 15 45.6 Units
C/W 0 C
C in-lb g
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