Datasheet Summary
Naina Semiconductor Ltd.
Features
- -
- - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR12020CT thru MBR12040CTR
Silicon Schottky Diode, 120A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR12020CT (R) 20 14 20 120 MBR12030CT MBR12035CT (R) (R) 30 21 30 120 35 25 35 120 MBR12040CT (R) 40 28 40 120 Units V V V A
IFSM
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