Naina Semiconductor MBR12080CTR
Schottky Power Diode
| Part No. | MBR12080CTR |
|---|---|
| Datasheet | MBR12080CTR Download |
| Manufacturer |  Naina Semiconductor |
| Description | Schottky Power Diode |
| Buy | Stock & Price |
FEATURES
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● Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A TWIN TOWER PACKAGE
MAXIMUM RATINGS
(TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR12045CT (R) 45 32 45 120 MBR12060CT MBR12080CT (R) (R) 60 42 60 120 80 56 80 120 MBR120100C T(R) 100 70 100 120 Units V V V A IFSM 800 800 800 800 AELECTRICAL CHARACTERISTICS
(TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 60 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR12045CT (R) 0.68 3 200 MBR12060CT (R) 0.75 3 200 MBR12080CT (R) 0.86 3 200 MBR120100C T(R) 0.86 3 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise speci...